inchange semiconductor product specification silicon npn power transistors 2SC5386 description ? with to-3p(h)is package ? high voltage;high speed ? low collector saturation voltage applications ? horizontal deflection output for high resolution display,color tv ? high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 16 a i b base current 4 a p c total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC5386 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 600 v v cesat collector-emitter saturation voltage i c =6a; i b =1.5a 3.0 v v besat base-emitter saturation voltage i c =6a; i b =1.5a 1.5 v i cbo collector cut-off current v cb =1500v; i e =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe-1 dc current gain i c =1a ; v ce =5v 15 35 h fe-2 dc current gain i c =6a ; v ce =5v 4.3 7.5 c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 105 pf f t transition frequency i e =0.1a ; v ce =10v 1.7 mhz switching times t s storage time 2.5 3.5 | s t f fall time i cp =5a;i b1( end ) =1.0a f h =64khz 0.15 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC5386 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SC5386
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